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BSP304 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BSP304 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 9 page 1995 Apr 07 6 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistors BSP304; BSP304A Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Tj =25 °C. handbook, halfpage 0 10 20 30 40 50 60 1 101010 ID (mA) VGS = 3 V 4 V 5 V 7 V 10 V MLC692 23 6 V R DSon ( Ω) Fig.11 Temperature coefficient of gate-source threshold voltage. Typical VGSth at ID = −1 mA; VDS =VGS. k V GSth at Tj V GSth at 25 ° C -------------------------------------- = handbook, halfpage 0.8 0.9 1.0 1.1 0 50 100 150 50 k T ( C) j o MLC696 Fig.12 Temperature coefficient of drain-source on-state resistance. Typical RDSon at ID = −170 mA; VGS = −10 V. k R DSon at Tj R DSon at 25 ° C ----------------------------------------- = handbook, halfpage 0 0.5 1 1.5 2 2.5 0 50 100 150 k T ( C) j o MLC695 50 |
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