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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 02 — 3 February 2005

3 of 11

Philips Semiconductors

PEMB17; PUMB17

PNP/PNP resistor-equipped transistors; R1 = 47 k

Ω, R2 = 22 kΩ

5.

Limiting values

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

6.

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board, single-sided copper, standard footprint.

[2]

Reflow soldering is the only recommended soldering method.

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

collector-base voltage

open emitter

-

−50

V

collector-emitter voltage

open base

-

−50

V

emitter-base voltage

open collector

-

−10

V

input voltage

positive

-

+10

V

negative

-

−40

V

output current (DC)

-

−100

mA

peak collector current

-

−100

mA

total power dissipation

SOT363

[1] -

200

mW

SOT666

[1] [2] -

200

mW

storage temperature

−65

+150

°C

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

Per device

total power dissipation

SOT363

[1] -

300

mW

SOT666

[1] [2] -

300

mW

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

thermal resistance from

junction to ambient

SOT363

[1] -

-

625

K/W

SOT666

[1] [2] -

-

625

K/W

Per device

thermal resistance from

junction to ambient

SOT363

[1] -

-

416

K/W

SOT666

[1] [2] -

-

416

K/W