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1N5811US Datasheet(PDF) 1 Page - Microsemi Corporation |
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1N5811US Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 3 page  SURFACE MOUNT VOIDLESS- HERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSD A L E DIVISION 1N5807US thru 1N5811US DESCRIPTION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless- glass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded package configurations (see separate data sheet for 1N5807 thru 1N5811). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast, and ultrafast device types in both through- hole and surface mount packages. Package “E” or D-5B IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com FEATURES APPLICATIONS / BENEFITS • Surface mount package series equivalent to the JEDEC registered 1N5807 to 1N5811 series • Voidless-hermetically-sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, JANTXV, and JANS available per MIL- PRF-19500/477 • Axial-leaded equivalents also available (see separate data sheet for 1N5807 thru 1N5811) • Ultrafast recovery 6 Amp rectifiers series 50 to 150 V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Operating Temperature: -65 oC to +175oC. • Storage Temperature: -65 oC to +175oC. • Average Rectified Forward Current (IO): 6 Amps @ TEC = 75ºC End Cap temperature (see note 1) • Thermal Resistance: 10 ºC/W junction to end cap • Thermal Impedance: 1.5 ºC/W @ 10 ms heating time • Forward Surge Current (8.3 ms half sine) 125 Amps • Solder temperature: 260ºC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINALS: End caps are solid Silver with Tin/Lead (Sn/Pb) finish • MARKING & POLARITY: Cathode band only • Tape & Reel option: Standard per EIA-481-B • Weight: 539 mg • See package dimensions and recommended pad layout on last page ELECTRICAL CHARACTERISTICS TYPE WORKING PEAK REVERSE VOLTAGE VRWM BREAKDOWN VOLTAGE (MIN.) @ 100 µA VBR AVERAGE RECTIFIED CURRENT IO1 @TEC=75ºC (Note 1) AVERAGE RECTIFIED CURRENT IO2 @TA=55ºC (Note 2) MAXIMUM FORWARD VOLTAGE @ 4 A (8.3 ms pulse) VF REVERSE CURRENT (MAX) @ VRWM IR SURGE CURRENT (MAX) IFSM (NOTE 3) REVERSE RECOVERY TIME (MAX) (NOTE 4) trr VOLTS VOLTS AMPS AMPS VOLTS µA AMPS ns 25 oC 100 oC 25oC 100oC 1N5807US 1N5809US 1N5811US 50 100 150 60 110 160 6.0 6.0 6.0 3.0 3.0 3.0 0.875 0.875 0.875 0.800 0.800 0.800 5 5 5 150 150 150 125 125 125 30 30 30 NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175ºC NOTE 3: TA = 25 oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals NOTE 4: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min Microsemi Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 Page 1 Copyright 2004 1-14-2005 REV B |
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