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BSR31 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BSR31 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 26 2 Philips Semiconductors Product specification PNP medium power transistors BSR30; BSR31; BSR33 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Telephony and general industrial applications • Thick and thin-film circuits. DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. PINNING PIN DESCRIPTION 1 emitter 2 collector 3 base Fig.1 Simplified outline (SOT89) and symbol. handbook, halfpage 123 Bottom view MAM297 3 2 1 MARKING TYPE NUMBER MARKING CODE BSR30 BR1 BSR31 BR2 BSR33 BR4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BSR30; BSR31 −−70 V BSR33 −−90 V VCEO collector-emitter voltage open base BSR30; BSR31 −−60 V BSR33 −−80 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−1A ICM peak collector current −−2A IBM peak base current −−200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.35 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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Similar Description - BSR31 |
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