GE28F128L30T110 datasheet(1/100 Pages) INTEL

Part #	GE28F128L30T110

Description	1.8 Volt Intel StrataFlash짰 Wireless Memory with 3.0-Volt I/O (L30)

Download	100 Pages

Scroll/Zoom	100%

Manufacturer	INTEL [Intel Corporation]

Direct Link	http://www.intel.com

Logo

1 / 100 page

1.8 Volt Intel StrataFlash

® Wireless

Memory with 3.0-Volt I/O (L30)

28F640L30, 28F128L30, 28F256L30

Datasheet

Product Features

The 1.8 Volt Intel StrataFlash

® wireless memory with 3-Volt I/O product is the latest generation of

Intel StrataFlash

® memory devices featuring flexible, multiple-partition, dual operation. It provides high

performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multi-

level cell (MLC) technology.

The multiple-partition architecture enables background programming or erasing to occur in one partition

while code execution or data reads take place in another partition. This dual-operation architecture also

allows two processors to interleave code operations while program and erase operations take place in the

background.

The

1.8 Volt Intel StrataFlash

® wireless memory with 3-Volt I/O device is manufactured using Intel

0.13 µm ETOX™ VIII process technology. It is available in industry-standard chip scale packaging.

.

■

High performance Read-While-Write/Erase

—85 ns initial access

—52MHz with zero wait state, 17 ns clock-to-data

output synchronous-burst mode

— 25 ns asynchronous-page mode

—4-, 8-, 16-, and continuous-word burst mode

—Burst suspend

— Programmable WAIT configuration

—Buffered Enhanced Factory Programming

(Buffered EFP): 3.5 µs/byte (Typ)

—1.8 V low-power buffered and non-buffered

programming @ 10 µs/byte (Typ)

■

Architecture

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64Mb and 128Mb

devices

— Multiple 16-Mbit partitions: 256Mb devices

—Four 16-KWord parameter blocks: top or

bottom configurations

— 64K-Word main blocks

— Dual-operation: Read-While-Write (RWW) or

Read-While-Erase (RWE)

— Status register for partition and device status

■

Power

—1.7 V - 2.0 V VCC operation

—I/O voltage: 2.2 V - 3.3 V

— Standby current: 30 µA (Typ)

—4-Word synchronous read current: 17 mA (Typ)

@ 54 MHz

— Automatic Power Savings (APS) mode

■ Software

—20 µs (Typ) program suspend

—20 µs (Typ) erase suspend

—Intel® Flash Data Integrator (FDI) optimized

—Basic Command Set (BCS) and Extended

Command Set (ECS) compatible

— Common Flash Interface (CFI) capable

■ Security

—OTP space:

— 64 unique device identifier bits

— 64 user-programmable OTP bits

— Additional 2048 user-programmable OTP

bits

— Absolute write protection: VPP = GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

—ETOX™ VIII process technology (0.13 µm)

■ Density and Packaging

—64-, 128- and 256-Mbit density in VF BGA

packages

— 128/0, and 256/0 Density in Stacked-CSP

— 16-bit wide data bus

Order Number: 251903-003

April 2003

Notice:

This document contains information on products in the design phase of

development. The information here is subject to change without notice. Do not finalize

a design with this information.

Similar Part No. - GE28F128L30T110

Manufacturer	Part #	Datasheet	Description
Intel Corporation	GE28F128L18B85	1Mb / 106P	StrataFlash Wireless Memory
Intel Corporation	GE28F128L18T85	1Mb / 106P	StrataFlash Wireless Memory

More results

GE28F128L30T110 Datasheet(PDF) 1 Page - Intel Corporation

GE28F128L30T110 Datasheet(HTML) 1 Page - Intel Corporation

Similar Part No. - GE28F128L30T110

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100

Datasheet Download

Link URL