Electronic Components Datasheet Search |
|
GE28F128L30B110 Datasheet(PDF) 1 Page - Intel Corporation |
|
GE28F128L30B110 Datasheet(HTML) 1 Page - Intel Corporation |
1 / 100 page 1.8 Volt Intel StrataFlash ® Wireless Memory with 3.0-Volt I/O (L30) 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features The 1.8 Volt Intel StrataFlash ® wireless memory with 3-Volt I/O product is the latest generation of Intel StrataFlash ® memory devices featuring flexible, multiple-partition, dual operation. It provides high performance synchronous-burst read mode and asynchronous read mode using 1.8 volt low-voltage, multi- level cell (MLC) technology. The multiple-partition architecture enables background programming or erasing to occur in one partition while code execution or data reads take place in another partition. This dual-operation architecture also allows two processors to interleave code operations while program and erase operations take place in the background. The 1.8 Volt Intel StrataFlash ® wireless memory with 3-Volt I/O device is manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-standard chip scale packaging. . ■ High performance Read-While-Write/Erase —85 ns initial access —52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode — 25 ns asynchronous-page mode —4-, 8-, 16-, and continuous-word burst mode —Burst suspend — Programmable WAIT configuration —Buffered Enhanced Factory Programming (Buffered EFP): 3.5 µs/byte (Typ) —1.8 V low-power buffered and non-buffered programming @ 10 µs/byte (Typ) ■ Architecture — Asymmetrically-blocked architecture — Multiple 8-Mbit partitions: 64Mb and 128Mb devices — Multiple 16-Mbit partitions: 256Mb devices —Four 16-KWord parameter blocks: top or bottom configurations — 64K-Word main blocks — Dual-operation: Read-While-Write (RWW) or Read-While-Erase (RWE) — Status register for partition and device status ■ Power —1.7 V - 2.0 V VCC operation —I/O voltage: 2.2 V - 3.3 V — Standby current: 30 µA (Typ) —4-Word synchronous read current: 17 mA (Typ) @ 54 MHz — Automatic Power Savings (APS) mode ■ Software —20 µs (Typ) program suspend —20 µs (Typ) erase suspend —Intel® Flash Data Integrator (FDI) optimized —Basic Command Set (BCS) and Extended Command Set (ECS) compatible — Common Flash Interface (CFI) capable ■ Security —OTP space: — 64 unique device identifier bits — 64 user-programmable OTP bits — Additional 2048 user-programmable OTP bits — Absolute write protection: VPP = GND — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down ■ Quality and Reliability — Expanded temperature: –25° C to +85° C — Minimum 100,000 erase cycles per block —ETOX™ VIII process technology (0.13 µm) ■ Density and Packaging —64-, 128- and 256-Mbit density in VF BGA packages — 128/0, and 256/0 Density in Stacked-CSP — 16-bit wide data bus Order Number: 251903-003 April 2003 Notice: This document contains information on products in the design phase of development. The information here is subject to change without notice. Do not finalize a design with this information. |
Similar Part No. - GE28F128L30B110 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |