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ILD1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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ILD1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page ILD1/ 2/ 5 / ILQ1/ 2/ 5 Document Number 83646 Rev. 1.4, 05-Nov-04 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 60 mA VF 1.25 1.65 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz CO 25 pF Thermal resistance, junction to lead TthJL 750 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Collector-emitter leakage current VVCE = 10 V ICEO 5.0 50 nA Saturation voltage, collector- emitter ICE = 1.0 mA, IB = 20 µAVCESAT 0.25 0.4 V DC forward current gain VCE = 10 V, IB = 20 µA HFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 µAHFEsat 120 400 600 Thermal resistance, junction to lead Rthjl 500 K/W Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) VIO = 0 V, f = 1.0 MHz CIO 0.8 pF Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio (collector-emitter saturated) IF = 10 mA, VCE = 0.4 V ILD1 ILQ1 CTRCEsat 75 % ILD2 ILQ2 CTRCEsat 170 % ILD5 ILQ5 CTRCEsat 100 % Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V ILD1 ILQ1 CTRCE 20 80 300 % ILD2 ILQ2 CTRCE 100 200 500 % ILD5 ILQ5 CTRCE 50 130 400 % |
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