ILD1 datasheet(3/9 Pages) VISHAY

Part #	ILD1

Description	Optocoupler, Phototransistor Output (Dual, Quad Channel)

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 9 page

ILD1/ 2/ 5 / ILQ1/ 2/ 5

Document Number 83646

Rev. 1.4, 05-Nov-04

Vishay Semiconductors

www.vishay.com

3

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Coupler

Current Transfer Ratio

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 60 mA

VF

1.25

1.65

V

Reverse current

VR = 6.0 V

IR

0.01

10

µA

Capacitance

VR = 0 V, f = 1.0 MHz

CO

25

pF

Thermal resistance, junction to

lead

TthJL

750

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

6.8

pF

Collector-emitter leakage

current

VVCE = 10 V

ICEO

5.0

50

nA

Saturation voltage, collector-

emitter

ICE = 1.0 mA, IB = 20 µAVCESAT

0.25

0.4

V

DC forward current gain

VCE = 10 V, IB = 20 µA

HFE

200

650

1800

DC forward current gain

saturated

VCE = 0.4 V, IB = 20 µAHFEsat

120

400

600

Thermal resistance, junction to

lead

Rthjl

500

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Capacitance (input-output)

VIO = 0 V, f = 1.0 MHz

CIO

0.8

pF

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Current Transfer Ratio

(collector-emitter saturated)

IF = 10 mA, VCE = 0.4 V

ILD1

ILQ1

CTRCEsat

75

%

ILD2

ILQ2

CTRCEsat

170

%

ILD5

ILQ5

CTRCEsat

100

%

Current Transfer Ratio

(collector-emitter)

IF = 10 mA, VCE = 10 V

ILD1

ILQ1

CTRCE

20

80

300

%

ILD2

ILQ2

CTRCE

100

200

500

%

ILD5

ILQ5

CTRCE

50

130

400

%

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