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BST80 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BST80 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  1997 Jun 20 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST80 FEATURES • Low drain-source on-state resistance • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Thin and thick film circuits • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT89 package. PINNING - SOT89 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate Fig.1 Simplified outline and symbol. handbook, halfpage 12 3 s d g MAM355 Bottom view Marking code: KM QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VDS drain-source voltage (DC) − 80 V VGSO gate-source voltage (DC) open drain −±20 V ID drain current (DC) − 500 mA Ptot total power dissipation Tamb ≤ 25 °C − 1W RDSon drain-source on-state resistance ID = 500 mA; VGS =10V 2 3 Ω yfs forward transfer admittance ID = 500 mA; VDS =15V 300 − mS |
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