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IRFZ34VPBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFZ34VPBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFZ34VPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25Β°C, IS = 30A, VGS = 0V
Β„
trr
Reverse Recovery Time
–––
70
110
ns
TJ = 25Β°C, IF = 30A
Qrr
Reverse Recovery Charge
–––
99
150
nC
di/dt = 100A/Β΅s
Β„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
30
120
A
Β‚ Starting TJ = 25Β°C, L = 180Β΅H
RG = 25Ω, IAS = 30A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Βƒ ISD ≀ 30A, di/dt ≀ 250A/Β΅s, VDD ≀ V(BR)DSS,
TJ ≀ 175Β°C
Β„ Pulse width ≀ 400Β΅s; duty cycle ≀ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250Β΅A
βˆ†V(BR)DSS/βˆ†TJ Breakdown Voltage Temp. Coefficient
––– 0.062 –––
V/Β°C Reference to 25Β°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
26
m
Ω
VGS = 10V, ID = 18A
Β„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250Β΅A
gfs
Forward Transconductance
15
–––
–––
S
VDS = 25V, ID = 18A
Β„
–––
–––
25
Β΅A
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150Β°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
49
ID = 30A
Qgs
Gate-to-Source Charge
–––
–––
12
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
18
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 30V
tr
Rise Time
–––
65
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
31
–––
RG = 12Ω
tf
Fall Time
–––
40
–––
VGS = 10V, See Fig. 10
Β„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1120 –––
VGS = 0V
Coss
Output Capacitance
–––
250
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
59
–––
pF
Ζ’ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25Β°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current




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