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BT134W-500E Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT134W-500E Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Triacs BT134W series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance full or half cycle - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT134W- ... ...F ...G I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 11 35 25 50 mA T2- G+ - 30 70 70 100 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 7 20 20 30 mA T2+ G- - 16 30 30 45 mA T2- G- - 5 20 20 30 mA T2- G+ - 7 30 30 45 mA I H Holding current V D = 12 V; IGT = 0.1 A - 5 15 15 30 mA V T On-state voltage I T = 2 A - 1.2 1.50 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA T j = 125 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT134W- ... ...F ...G dV D/dt Critical rate of rise of V DM =67% VDRM(max); 100 50 200 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com/dt Critical rate of change of V DM = 400 V; Tj = 95 ˚C; - - 10 50 - V/ µs commutating voltage I T(RMS) = 1 A; dI com/dt = 1.8 A/ms; gate open circuit t gt Gate controlled turn-on I TM = 1.5 A; - - - 2 - µs time V D = VDRM(max); IG = 0.1 A; dI G/dt = 5 A/µs; September 1997 2 Rev 1.200 |
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