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BT134W-500E Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BT134W-500E
Description  Triacs sensitive gate
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BT134W-500E Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Triacs
BT134W series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-sp
Thermal resistance
full or half cycle
-
-
15
K/W
junction to solder point
R
th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT134W-
...
...F
...G
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
7
20
20
30
mA
T2+ G-
-
16
30
30
45
mA
T2- G-
-
5
20
20
30
mA
T2- G+
-
7
30
30
45
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
5
15
15
30
mA
V
T
On-state voltage
I
T = 2 A
-
1.2
1.50
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current
V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
DYNAMIC CHARACTERISTICS
T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT134W-
...
...F
...G
dV
D/dt
Critical rate of rise of
V
DM =67% VDRM(max);
100
50
200
250
-
V/
µs
off-state voltage
T
j = 125 ˚C; exponential
waveform; gate open
circuit
dV
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 95 ˚C;
-
-
10
50
-
V/
µs
commutating voltage
I
T(RMS) = 1 A;
dI
com/dt = 1.8 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 1.5 A;
-
-
-
2
-
µs
time
V
D = VDRM(max); IG = 0.1 A;
dI
G/dt = 5 A/µs;
September 1997
2
Rev 1.200


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