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BT136-600 Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BT136-600
Description  Triacs
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 1 page
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Philips Semiconductors
Product specification
Triacs
BT136 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
envelope,
intended
for
use
in
applications
requiring
high
BT136-
500
600
800
bidirectional transient and blocking
BT136-
500F
600F
800F
voltage capability and high thermal
BT136-
500G
600G
800G
cycling
performance.
Typical
V
DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial
and
domestic
lighting,
I
T(RMS)
RMS on-state current
4
4
4
A
heating and static switching.
I
TSM
Non-repetitive peak on-state
25
25
25
A
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb ≤ 107 ˚C
-
4
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2tI2t for fusing
t = 10 ms
-
3.1
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 6 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/µs
triggering
T2+ G+
-
50
A/
µs
T2+ G-
-
50
A/
µs
T2- G-
-
50
A/
µs
T2- G+
-
10
A/
µs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
T1
T2
G
12 3
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
µs.
August 1997
1
Rev 1.200




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