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DCR1910V85 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DCR1910V85 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 9 page  SEMICONDUCTOR DCR1910V85 4/9 www.dynexsemi.com GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES 0 1000 2000 3000 4000 5000 6000 7000 0.0 2.0 4.0 6.0 Instantaneous on-state voltage VT - (V) min 125°C max 125°C min 25°C max 25°C Fig.2 Maximum & minimum on-state characteristics VTM EQUATION Where A = 0.398265 B = 0.121095 VTM = A + Bln (IT) + C.IT+D. √I T C = 0.000524 D = -0.000007 these values are valid for Tj = 125°C for I T 500A to 7200A |
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