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IRFC240 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFC240
Description  HEXFET Power MOSFET Die in Wafer Form
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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Parameter
Description
Guaranteed (Min/Max)
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
200V Min.
VGS = 0V, ID = 100µA
RDS(on)
Static Drain-to-Source On-Resistance
0.180
Ω Max.
VGS = 10V, ID = 10A
VGS(th)
Gate Threshold Voltage
2.3V Min., 4.0V Max.
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
25µA Max.
VDS = 200V, VGS = 0V, TJ = 25°C
IGSS
Gate-to-Source Leakage
± 10µA Max.
VGS = ±20V
TJ
Operating Junction and
125°C Max.
TSTG
Storage Temperature Range
Nominal Backmetal Composition, Thickness:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
Nominal Front Metal Composition, Thickness:
99% Al, 1% Si (0.004 mm)
Dimensions:
0.147" x 0.201" ( 3.73mm x 5.11 mm)
Wafer Diameter:
125mm with 100 flat
Wafer thickness:
0.375mm + / -0.020mm
Relevant Die Mechanical Dwg. Number
01-5331
Minimum Street Width
0.084 mm
Reject Ink Dot Size
0.51mm Diameter Minimum
Recommended Storage Environment:
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300C
200 V
Size 4.0
Rds(on)=0.18
5" Wafer
3/23/99
Mechanical Data
Die Outline
Reference Standard IR packaged part ( for design ) : IRF640
Electrical Characteristics ( Wafer Form )
IRFC240
HEXFET® Power MOSFET Die in Wafer Form
S
D
G
PD- 91873




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