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IRFB4321PBF Datasheet(PDF) 4 Page - International Rectifier

Part No. IRFB4321PBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFB4321PbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.20.4
0.60.8
1.01.2
1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
LIMITED BY PACKAGE
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
140
150
160
170
180
190
0
20
40
60
80
100
120
140
160
VDS, Drain-to-Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
I D
TOP
13A
20A
BOTTOM
50A
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
DC




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