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CPV364M4F Datasheet(PDF) 1 Page - International Rectifier |
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CPV364M4F Datasheet(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current, each IGBT 27 IC @ TC = 100°C Continuous Collector Current, each IGBT 15 ICM Pulsed Collector Current 80 A ILM Clamped Inductive Load Current 80 IF @ TC = 100°C Diode Continuous Forward Current 9.3 IFM Diode Maximum Forward Current 80 VGE Gate-to-Emitter Voltage ±20 V VISOL Isolation Voltage, any terminal to case, 1 minute 2500 VRMS PD @ TC = 25°C Maximum Power Dissipation, each IGBT 63 W PD @ TC = 100°C Maximum Power Dissipation, each IGBT 25 TJ Operating Junction and -40 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting torque, 6-32 or M3 screw. 5-7 lbf•in (0.55-0.8 N•m) CPV364M4F PRELIMINARY PD -5040 Parameter Typ. Max. Units RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 2.0 RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction ––– 3.0 °C/W RθCS (MODULE) Case-to-Sink, flat, greased surface 0.10 ––– Wt Weight of module 20 (0.7) ––– g (oz) Fast IGBT IGBT SIP MODULE Thermal Resistance Features Description 3 6 71 3 1 9 18 15 10 16 4 9 12 D1 D3 D5 D2 D4 D6 Q1 Q2 Q3 Q4 Q5 Q6 1 Output Current in a Typical 5.0 kHz Motor Drive Product Summary • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes • Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve 18 ARMS per phase (4.6 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. Absolute Maximum Ratings 12/30/96 IMS-2 |
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