IXTH88N15 datasheet(1/2 Pages) IXYS

Part #	IXTH88N15

Description	High Current Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

150

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

150

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C88

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

352

A

I

AR

T

C

= 25

°C88

A

E

AR

T

C

= 25

°C50

mJ

E

AS

T

C

= 25

°C

1.5

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247 AD

6

g

TO-268

4

g

TO-247 AD (IXTH)

G = Gate

D = Drain

S = Source

TAB = Drain

(TAB)

DS99034(04/03)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min. Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 µA

150

V

GS(th)

V

DS = VGS, ID = 250µA

2.0

4.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±100

nA

I

DSS

V

DS

= V

DSS

T

J =

25

°C25

µA

V

GS = 0 V

T

J = 125°C1

mA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25

22

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

TO-268 (IXTT) Case Style

(TAB)

G

S

High Current

Power MOSFET

IXTH 88N15

V

DSS

=

150

V

IXTT 88N15

I

D25

=

88

A

R

DS(on)

=

22

m

Ω

Advance Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Low R

DS (on) HDMOS

TM

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

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