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2MBI100SC-120 Datasheet(PDF) 2 Page - Fuji Electric

Part # 2MBI100SC-120
Description  1200V / 100A 2 in one-package
Download  4 Pages
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2MBI100SC-120 Datasheet(HTML) 2 Page - Fuji Electric

  2MBI100SC-120 Datasheet HTML 1Page - Fuji Electric 2MBI100SC-120 Datasheet HTML 2Page - Fuji Electric 2MBI100SC-120 Datasheet HTML 3Page - Fuji Electric 2MBI100SC-120 Datasheet HTML 4Page - Fuji Electric  
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2MBI100SC-120
IGBT Module
Characteristics (Representative)
01
23
45
0
50
100
150
200
250
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
0
1
23
45
0
50
100
150
200
250
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
01
23
45
0
50
100
150
200
250
Tj= 25°C
Tj= 125°C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
5
10
152025
0
2
4
6
8
10
Ic=50A
Ic= 100A
Ic= 200A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
100
1000
5000
10000
50000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
200
400
600
800
1000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=100A, Tj= 25°C
Gate charge : Qg [ nC ]
0
5
10
15
20
25


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