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2MBI100SC-120 Datasheet(PDF) 2 Page - Fuji Electric |
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2MBI100SC-120 Datasheet(HTML) 2 Page - Fuji Electric |
2 / 4 page 2MBI100SC-120 IGBT Module Characteristics (Representative) 01 23 45 0 50 100 150 200 250 8V 10V 12V 15V VGE= 20V Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) Collector - Emitter voltage : VCE [ V ] 0 1 23 45 0 50 100 150 200 250 8V 10V 12V 15V VGE= 20V Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) Collector - Emitter voltage : VCE [ V ] 01 23 45 0 50 100 150 200 250 Tj= 25°C Tj= 125°C Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector - Emitter voltage : VCE [ V ] 5 10 152025 0 2 4 6 8 10 Ic=50A Ic= 100A Ic= 200A Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Gate - Emitter voltage : VGE [ V ] 0 5 10 15 20 25 30 35 100 1000 5000 10000 50000 Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector - Emitter voltage : VCE [ V ] Coes Cres Cies 0 200 400 600 800 1000 0 200 400 600 800 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=100A, Tj= 25°C Gate charge : Qg [ nC ] 0 5 10 15 20 25 |
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