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TAS5261 Datasheet(PDF) 10 Page - Texas Instruments |
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TAS5261 Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 21 page  www.ti.com ELECTRICAL CHARACTERISTICS TAS5261 SLES188 – AUGUST 2006 GVDD_x = 12 V ± 10%, VDD = 12 V ± 10%, T J = 25°C (unless otherwise noted) PARAMETER CONDITIONS MIN TYP MAX UNIT Logic-Level and Open-Drain Outputs VIH High-level input voltage Static 2 V VIL Low-level input voltage Static 0.8 V Static, High PWM_A, High PWM_B, 45 65 High M1, High M2, High M3 Static, Low PWM_A, Low PWM_B, –10 10 Ilkg(1) Input leakage current µA Low M1, Low M2, Low M3 Static, High RESET 20 40 Static, Low RESET –70 –50 Internal pulldown to AGND RINT-PD 50 k Ω for PWM_A and PWM_B inputs RINT-PU Internal pullup resistance on OTW and SD Resistor to VREG 20 28 33 k Ω Internal pullup resistor 2.4 VREG VOH High-level output voltage V External pullup of 3.3 k Ω to 5 V 2.5 4.9 VOL Low-level output voltage IO = 4 mA 0.4 V FANOUT Device fanout (OTW, SD) External pullup to 5 V 10 Devices (1) Pullup and pulldown resistors affect the leakage current. 10 Submit Documentation Feedback |
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