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BT138X-600E Datasheet(PDF) 3 Page - NXP Semiconductors |
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BT138X-600E Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 6 page Philips Semiconductors Product specification Triacs BT138X series DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT138X- ... ...F ...G dV D/dt Critical rate of rise of V DM = 67% VDRM(max); 100 50 200 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com/dt Critical rate of change of V DM = 400 V; Tj = 95 ˚C; - - 10 20 - V/ µs commutating voltage I T(RMS) = 12 A; dI com/dt = 5.4 A/ms; gate open circuit t gt Gate controlled turn-on I TM = 16 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs September 1997 3 Rev 1.200 |
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