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ND2406L/2410L, BSS129
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specificationsa
Limits
ND2406L
ND2410L
BSS129
Parameter
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
Static
Di S
VGS = –9 V, ID = 10 mA
260
240
Drain-Source
Breakdown Voltage
V(BR)DSV
VGS = –5 V, ID = 10 mA
260
240
g
VGS = –3 V, ID = 250 mA
260
230
V
Gate Source Cutoff Voltage
VGS( ff)
VDS = 5 V, ID = 10 mA
–1.5
–4.5
–0.5
–2.5
Gate-Source Cutoff Voltage
VGS(off)
VDS = 3 V, ID = 1 mA
–0.7
Gate Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"10
"10
"100
nA
Gate-Body Leakage
IGSS
TJ = 125_C
"50
"50
nA
VDS = 180 V, VGS = –9 V
1
TJ = 125_C
200
Drain Cutoff Current
ID( ff)
VDS = 180 V, VGS = –5 V
1
mA
Drain Cutoff Current
ID(off)
TJ = 125_C
200
mA
VDS = 230 V, VGS = –3 V
0.1
TJ = 125_C
200
Drain-Saturation Currentc
IDSS
VDS = 10 V, VGS = 0 V
350
40
40
mA
VGS = 2 V, ID = 30 mA
3.3
Drain Source On Resistancec
rDS( )
VGS = 0 V, ID = 30 mA
4.5
6
10
W
Drain-Source On-Resistancec
rDS(on)
TJ = 125_C
7.2
15
25
W
VGS = 0 V, ID = 14 mA
4
20
Forward Transconductancec
gf
VDS = 25 V, ID = 250 mA
375
140
mS
Forward Transconductancec
gfs
110
mS
Common Source
Output Conductancec
gos
VDS = 10 V, ID = 30 A
70
mS
Dynamic
Input Capacitance
Ciss
V
25 V V
5V
70
120
120
Output Capacitance
Coss
VDS = 25 V, VGS = –5 V
f = 1 MHz
20
30
30
pF
Reverse Transfer Capacitance
Crss
10
15
15
Switchingd
Turn On Time
td(on)
15
Turn-On Time
tr
VDD = 25 V, RL = 830 W
ID ^ 30 mA VGEN =-5V
75
ns
Turn-Off Time
td(off)
ID ^ 30 mA, VGEN =-5V
RG =25 W
40
ns
Turn-Off Time
tf
100
Notes
a.
TA = 25_C unless otherwise noted.
VDDV24
b.
For DESIGN AID ONLY, not subject to production testing.
c.
Pulse test: PW
v300 ms duty cycle v2%.
d.
Switching time is essentially independent of operating temperature.