BT150M-600R datasheet(2/6 Pages) PHILIPS

Part #	BT150M-600R

Description	Thyristors logic level

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Thyristors

BT150S series

logic level

BT150M series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-mb

Thermal resistance

-

3.0

K/W

junction to mounting base

R

th j-a

Thermal resistance

pcb (FR4) mounted; footprint as in Fig.14

-

75

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

GT

Gate trigger current

V

D = 12 V; IT = 0.1 A

-

15

200

µA

I

L

Latching current

V

D = 12 V; IGT = 0.1 A

-

0.17

10

mA

I

H

Holding current

V

D = 12 V; IGT = 0.1 A

-

0.10

6

mA

V

T

On-state voltage

I

T = 5 A

-

1.23

1.8

V

GT

Gate trigger voltage

V

D = 12 V; IT = 0.1 A

-

0.4

1.5

V

D = VDRM(max); IT = 0.1 A; Tj = 110 ˚C

0.1

0.2

-

V

I

D, IR

Off-state leakage current

V

D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

-

0.1

0.5

mA

DYNAMIC CHARACTERISTICS

T

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dV

D/dt

Critical rate of rise of

V

DM = 67% VDRM(max); Tj = 125 ˚C;

-

50

-

V/

µs

off-state voltage

exponential waveform; R

GK = 100 Ω

t

gt

Gate controlled turn-on

I

TM = 10 A; VD = VDRM(max); IG = 5 mA;

-

2

-

µs

time

dI

G/dt = 0.2 A/µs

t

q

Circuit commutated

V

D = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A;

-

100

-

µs

turn-off time

V

R = 10 V; dITM/dt = 10 A/µs;

dV

D/dt = 2 V/µs; RGK = 1 kΩ

October 1997

2

Rev 1.100

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