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BT150M-600R Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT150M-600R Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Thyristors BT150S series logic level BT150M series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 3.0 K/W junction to mounting base R th j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 15 200 µA I L Latching current V D = 12 V; IGT = 0.1 A - 0.17 10 mA I H Holding current V D = 12 V; IGT = 0.1 A - 0.10 6 mA V T On-state voltage I T = 5 A - 1.23 1.8 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.4 1.5 V V D = VDRM(max); IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V I D, IR Off-state leakage current V D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; - 50 - V/ µs off-state voltage exponential waveform; R GK = 100 Ω t gt Gate controlled turn-on I TM = 10 A; VD = VDRM(max); IG = 5 mA; - 2 - µs time dI G/dt = 0.2 A/µs t q Circuit commutated V D = 67% VDRM(max); Tj = 125 ˚C; ITM = 8 A; - 100 - µs turn-off time V R = 10 V; dITM/dt = 10 A/µs; dV D/dt = 2 V/µs; RGK = 1 kΩ October 1997 2 Rev 1.100 |
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