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BT151F-800 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BT151F-800 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Thyristors BT151F series ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external heatsink C isol Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance with heatsink compound - - 4.5 K/W junction to heatsink without heatsink compound - - 6.5 K/W R th j-a Thermal resistance in free air - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA I L Latching current V D = 12 V; IGT = 0.1 A - 10 40 mA I H Holding current V D = 12 V; IGT = 0.1 A - 7 20 mA V T On-state voltage I T = 23 A - 1.4 1.75 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V V D = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V I D, IR Off-state leakage current V D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; off-state voltage exponential waveform Gate open circuit 50 130 - V/ µs R GK = 100 Ω 200 1000 - V/ µs t gt Gate controlled turn-on I TM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - µs time dI G/dt = 5 A/µs t q Circuit commutated V D = 67% VDRM(max); Tj = 125 ˚C; - 70 - µs turn-off time I TM = 20 A; VR = 25 V; dITM/dt = 30 A/µs; dV D/dt = 50 V/µs; RGK = 100 Ω February 1996 2 Rev 1.100 |
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Similar Description - BT151F-800 |
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