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BT151X-800 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BT151X-800 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 11 page 9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 7 of 11 Philips Semiconductors BT151X series Thyristors 8. Package information Epoxy meets requirements of UL94 V-0 at 1 ⁄ 8 inch. VO = 1.06 V. RS = 0.0304 Ω. (1) Tj = 125 °C; typical values. (2) Tj = 125 °C; maximum values. (3) Tj =25 °C; maximum values. Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of junction temperature. (1) RGK = 100 Ω. (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature. Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values. VT (V) 02 1.5 0.5 1 001aaa959 10 20 30 IT (A) 0 (3) (2) (1) Tj (°C) −50 150 100 050 001aaa951 1 2 3 IL (Tj) IL (25 °C) 0 Tj (°C) −50 150 100 050 001aaa950 1 2 3 IH (Tj) IH (25 °C) 0 001aaa949 103 102 104 dVD/dt (V/ µs) 10 Tj (°C) 0 150 100 50 (2) (1) |
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