HN29WB800T-8 datasheet(11/37 Pages) HITACHI

Part #	HN29WB800T-8

Description	1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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HN29WT800 Series, HN29WB800 Series

11

Software Command Definition

First bus cycle

Second bus cycle

Third bus cycle

Command

Operation

mode

Address

Data

(I/O7 to

I/O0)*

1

Operation

mode

Address

Data

(I/O7

to I/O0)

Operation

mode

Address

Data

(I/O7

to I/O0)

Read array (memory) Write

×

FFH

Read identifier codes Write

×

90H

Read

IA*

2

ID*

2

Read status register

Write

×

70H

Read

×

SRD*

3

Clear status register

Write

×

50H

Page program*

5

Write

×

41H

Write

WA0*

4

WD0*

4

Write

WA1

WD1

Block erase

Write

×

20H

Write

BA*

6

D0H

Suspend

Write

×

B0H

Resume

Write

×

D0H

Read lock bit status

Write

×

71H

Read

BA

I/O6*

7

Lock bit

program/confirm

Write

×

77H

Write

BA

D0H

Erase all unlocked

blocks

Write

×

A7H

Write

×

D0H

Notes: 1. In the word mode, upper byte data (I/O8 to I/O15) is ignored.

2. IA = Identifier address, A0 = V

IL (Manufacture code), A0 = VIH (Device code), ID = ID code,

BYTE = V

IL:

A-1, A1 to A18 = V

IL, BYTE = VIH:

A1 to A18 = V

IL.

3. SRD = Status register data

4. WA = Write address, WD = Write data

5.

BYTE = V

IL:

Write address and write data must be provided sequentially from 00H to FFH for A-1

to A6. Page size is 256 byte (256-byte

× 8-bit).

BYTE = V

IH:

Write address and write data must be provided sequentially from 00H to 7FH for A0 to

A6. Page size is 128 word (128-word

× 16-bit).

6. BA = Block address (A12 to A18), (Addresses except block address must be V

IH)

7. I/O6 provides block lock status, I/O6 = 1: Block unlocked, I/O6 = 0: Block locked.

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HN29WB800T-8 Datasheet(PDF) 11 Page - Hitachi Semiconductor

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