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NTB52N10T4 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTB52N10T4 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 3 1 Publication Order Number: NTB52N10/D NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−DrainDiode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Mounting Information Provided for the D2PAK Package • Pb−Free Packages are Available Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 100 Vdc Drain−to−Source Voltage (RGS = 1.0 MW) VDGR 100 Vdc Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) VGS VGSM "20 "40 Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Pulsed (Note 1) ID ID IDM 52 40 156 Adc Total Power Dissipation @ TA = 25°C Derate above 25 °C Total Power Dissipation @ TA = 25°C (Note 2) PD 178 1.43 2.0 W W/ °C W Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 W) EAS 800 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) RqJC RqJA RqJA 0.7 62.5 50 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8in from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu. Area 0.412 in2). Device Package Shipping† ORDERING INFORMATION N−Channel D S G NTB52N10 D2PAK 50 Units / Rail NTB52N10T4 D2PAK 800 / Tape & Reel http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. VDSS RDS(ON) TYP ID MAX 100 V 30 m W @ 10 V 52 A NTB52N10G D2PAK (Pb−Free) 50 Units / Rail NTB52N10T4G D2PAK (Pb−Free) 800 / Tape & Reel 1 2 3 4 D2PAK CASE 418B STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT NTB52N10 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package NTB 52N10G AYWW 1 Gate 3 Source 4 Drain 2 Drain |
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