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BT300X Datasheet(PDF) 1 Page - NXP Semiconductors |
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BT300X Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Thyristors BT300X series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT pack, plastic envelope, intended for use in applications requiring high BT300X- 500R 600R 800R bidirectional blocking voltage V DRM, Repetitive peak off-state 500 600 800 V capability and high thermal cycling V RRM voltages performance. Typical applications I T(AV) Average on-state current 5 5 5 A include motor control, industrial and I T(RMS) RMS on-state current 8 8 8 A domestic lighting, heating and static I TSM Non-repetitive peak on-state 65 65 65 A switching. current PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -600R -800R V DRM, VRRM Repetitive peak off-state - 500 1 600 1 800 V voltages I T(AV) Average on-state current half sine wave; T hs ≤ 79 ˚C - 5 A I T(RMS) RMS on-state current all conduction angles - 8 A I TSM Non-repetitive peak half sine wave; T j = 25 ˚C prior to on-state current surge t = 10 ms - 65 A t = 8.3 ms - 71 A I 2tI2t for fusing t = 10 ms - 21 A 2s dI T/dt Repetitive rate of rise of I TM = 10 A; IG = 50 mA; - 50 A/ µs on-state current after dI G/dt = 50 mA/µs triggering I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V V RGM Peak reverse gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature ak g 12 3 case 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/ µs. September 1997 1 Rev 1.100 |
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