HY57V64420HG datasheet(5/11 Pages) HYNIX

Part #	HY57V64420HG

Description	4 Banks x 4M x 4Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V64420HG

Rev. 0.4/Nov. 01

5

CAPACITANCE (TA=25°C, f=1MHz)

OUTPUT LOAD CIRCUIT

DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)

Note :

1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V

2.DOUT is disabled, VOUT=0 to 3.6V

Parameter

Symbol

Min

Max

Unit

Input capacitance

CLK

CI1

24

pF

A0 ~ A11, BA0, BA1, CKE, CS, RAS,

CAS, WE, DQM

CI2

2.5

5

pF

Data input / output capacitance

DQ0 ~ DQ3

CI/O

26.5

pF

Parameter

Symbol

Min.

Max

Unit

Note

Input Leakage Current

ILI

-1

1

uA

1

Output Leakage Current

ILO

-1

1

uA

2

Output High Voltage

VOH

2.4

-

V

IOH = -4mA

Output Low Voltage

VOL

-0.4

V

IOL = +4mA

Vtt=1.4V

RT=250

Ω

50pF

Output

50pF

Output

DC Output Load Circuit

AC Output Load Circuit

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