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BLC6G10-200 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BLC6G10-200 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 9 page BLC6G10-200_6G10LS-200_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Objective data sheet Rev. 01 — 19 April 2006 6 of 9 Philips Semiconductors BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor 9. Abbreviations Table 8: Abbreviations Acronym Description 3GPP Third Generation Partnership Project CCDF Complementary Cumulative Distribution Function CDMA Code Division Multiple Access CW Continuous Wave DPCH Dedicated Physical CHannel EDGE Enhanced Data rates for GSM Evolution GSM Global System for Mobile communications LDMOS Laterally Diffused Metal Oxide Semiconductor PAR Peak-to-Average power Ratio PDPCH transmission Power of the Dedicated Physical CHannel RF Radio Frequency VSWR Voltage Standing Wave Ratio W-CDMA Wideband Code Division Multiple Access |
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