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K6E1004C1B Datasheet(PDF) 4 Page - Samsung semiconductor

Part No. K6E1004C1B
Description  256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6E1004C1B-C/B-L
CMOS SRAM
PRELIMINARY
Rev. 3.0
- 4 -
July 1998
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
READ CYCLE
Parameter
Symbol
K6E1004C1B-15
K6E1004C1B-20
Unit
Min
Max
Min
Max
Read Cycle Time
tRC
15
-
20
-
ns
Address Access Time
tAA
-
15
-
20
ns
Chip Select to Output
tCO
-
15
-
20
ns
Output Enable to Valid Output
tOE
-
8
-
10
ns
Chip Enable to Low-Z Output
tLZ
3
-
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
0
-
ns
Chip Disable to High-Z Output
tHZ
0
6
0
8
ns
Output Disable to High-Z Output
tOHZ
0
6
0
8
ns
Output Hold from Address Change
tOH
3
-
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
0
-
ns
Chip Selection to Power DownTime
tPD
-
15
-
20
ns
Output Loads(A)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
DOUT
30pF*
480
255
+5.0V
* Including Scope and Jig Capacitance




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