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K6E1004C1B Datasheet(PDF) 5 Page - Samsung semiconductor

Part No. K6E1004C1B
Description  256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
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Maker  SAMSUNG [Samsung semiconductor]
Homepage  http://www.samsung.com/Products/Semiconductor
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K6E1004C1B-C/B-L
CMOS SRAM
PRELIMINARY
Rev. 3.0
- 5 -
July 1998
WRITE CYCLE
Parameter
Symbol
K6E1004C1B-15
K6E1004C1B-20
Unit
Min
Max
Min
Max
Write Cycle Time
tWC
15
-
20
-
ns
Chip Select to End of Write
tCW
10
-
12
-
ns
Address Set-up Time
tAS
0
-
0
-
ns
Address Valid to End of Write
tAW
10
-
12
-
ns
Write Pulse Width(OE High)
tWP
10
-
12
-
ns
Write Pulse Width(OE Low)
tWP1
15
-
20
-
ns
Write Recovery Time
tWR
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
8
0
10
ns
Data to Write Time Overlap
tDW
7
-
9
-
ns
Data Hold from Write Time
tDH
0
-
0
-
ns
End Write to Output Low-Z
tOW
3
-
3
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
CS
Address
OE
Data out
tAA
tOLZ
tLZ(4,5)
tOH
tRC
tOE
tCO
tPU
tPD
tHZ(3,4,5)
50%
50%
VCC
Current
ICC
ISB
Valid Data
tOHZ




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