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HM51W16400S-6 Datasheet(PDF) 8 Page - Hitachi Semiconductor

Part # HM51W16400S-6
Description  4,194,304-word x 4-bit Dynamic RAM
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM51W16400S-6 Datasheet(HTML) 8 Page - Hitachi Semiconductor

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HM51W16400 Series, HM51W17400 Series
8
DC Characteristics
(Ta = 0 to +70˚C, V
CC = 3.3 V ± 0.3 V, VSS = 0 V) (HM51W16400 Series)
HM51W16400
-5
-6
-7
Parameter
Symbol
Min Max Min Max Min Max Unit
Test conditions
Operating current*
1
, *2
I
CC1
90
80
—70mA
t
RC = min
Standby current
I
CC2
2
2
2
mA
TTL interface
RAS, CAS = V
IH
Dout = High-Z
1
1
1
mA
CMOS interface
RAS, CAS
≥ V
CC – 0.2 V
Dout = High-Z
Standby current
(L-version)
I
CC2
100 —
100 —
100
µA
CMOS interface
RAS, CAS
≥ V
CC – 0.2 V
Dout = High-Z
RAS-only refresh current*
2
I
CC3
90
80
—70mA
t
RC = min
Standby current*
1
I
CC5
—5
—5
5
mA
RAS = V
IH
CAS = V
IL
Dout = enable
CAS-before-RAS refresh
current
I
CC6
90
80
—70mA
t
RC = min
Fast page mode current*
1, *3
I
CC7
80
70
—60mA
t
PC = min
Battery backup current
(Standby with CBR refresh)
(L-version)
I
CC10
300 —
300 —
300
µA
CMOS interface
Dout = High-Z, CBR
refresh: t
RC = 31.3 µs
t
RAS ≤ 0.3 µs
Self refresh mode current
(L-version)
I
CC11
200 —
200 —
200
µA
CMOS interface
RAS, CAS
≤ 0.2 V
Dout = High-Z
Input leakage current
I
LI
–10
10
–10
10
–10 10
µA
0 V
≤ Vin ≤ 4.6 V
Output leakage current
I
LO
–10
10
–10
10
–10 10
µA
0 V
≤ Vin ≤ 4.6 V
Dout = disable
Output high voltage
V
OH
2.4
V
CC
2.4
V
CC
2.4
V
CC
V
High Iout = –2 mA
Output low voltage
V
OL
0
0.4
0
0.4
0
0.4
V
Low Iout = 2 mA
Notes : 1. I
CC depends on output load condition when the device is selected.
I
CC max is specified at the
output open condition.
2. Address can be changed once or less while
RAS = V
IL.
3. Address can be changed once or less while
CAS = V
IH.


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