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HM51W16400S-6 Datasheet(PDF) 8 Page - Hitachi Semiconductor |
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HM51W16400S-6 Datasheet(HTML) 8 Page - Hitachi Semiconductor |
8 / 33 page HM51W16400 Series, HM51W17400 Series 8 DC Characteristics (Ta = 0 to +70˚C, V CC = 3.3 V ± 0.3 V, VSS = 0 V) (HM51W16400 Series) HM51W16400 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Operating current* 1 , *2 I CC1 — 90 — 80 —70mA t RC = min Standby current I CC2 — 2 — 2 — 2 mA TTL interface RAS, CAS = V IH Dout = High-Z — 1 — 1 — 1 mA CMOS interface RAS, CAS ≥ V CC – 0.2 V Dout = High-Z Standby current (L-version) I CC2 — 100 — 100 — 100 µA CMOS interface RAS, CAS ≥ V CC – 0.2 V Dout = High-Z RAS-only refresh current* 2 I CC3 — 90 — 80 —70mA t RC = min Standby current* 1 I CC5 —5 —5 — 5 mA RAS = V IH CAS = V IL Dout = enable CAS-before-RAS refresh current I CC6 — 90 — 80 —70mA t RC = min Fast page mode current* 1, *3 I CC7 — 80 — 70 —60mA t PC = min Battery backup current (Standby with CBR refresh) (L-version) I CC10 — 300 — 300 — 300 µA CMOS interface Dout = High-Z, CBR refresh: t RC = 31.3 µs t RAS ≤ 0.3 µs Self refresh mode current (L-version) I CC11 — 200 — 200 — 200 µA CMOS interface RAS, CAS ≤ 0.2 V Dout = High-Z Input leakage current I LI –10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 4.6 V Output leakage current I LO –10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 4.6 V Dout = disable Output high voltage V OH 2.4 V CC 2.4 V CC 2.4 V CC V High Iout = –2 mA Output low voltage V OL 0 0.4 0 0.4 0 0.4 V Low Iout = 2 mA Notes : 1. I CC depends on output load condition when the device is selected. I CC max is specified at the output open condition. 2. Address can be changed once or less while RAS = V IL. 3. Address can be changed once or less while CAS = V IH. |
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