MP4506

2004-07-01

1

TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type

(Four Darlington Power Transistors inOne)

MP4506

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load

Switching

• Package with heat sink isolated to lead (SIP 12 pins)

• High collector power dissipation (4-device operation)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

Collector-emitter voltage

100

V

Emitter-base voltage

5

V

DC

5

Collector current

Pulse

8

A

Continuous base current

0.1

A

Collector power dissipation

(1-device operation)

3.0

W

Ta = 25°C

5.0

Collector power

dissipation

(4-device operation)

Tc = 25°C

25

W

Isolation voltage

1000

V

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Array Configuration

Industrial Applications

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-32B1B

Weight: 6.0 g (typ.)

2

1

3

R1 R2

4

5

9

11

10

R1 ≈ 5 kΩ

R2 ≈ 200 Ω

8

12

67