©2001 Fairchild Semiconductor Corporation

HUF75321P3, HUF75321S3S Rev. B

HUF75321P3, HUF75321S3S

35A, 55V, 0.034 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75321.

Features

• 35A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Models

- Thermal Impedance SPICE and SABER Models

Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html

For severe environments, see our Automotive HUFA series.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUF75321P3

TO-220AB

75321P

HUF75321S3S

TO-263AB

75321S

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST.

D

G

S

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet

December 2001