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HUF75321P3 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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HUF75321P3 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2001 Fairchild Semiconductor Corporation HUF75321P3, HUF75321S3S Rev. B HUF75321P3, HUF75321S3S 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321. Features • 35A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Packaging JEDEC TO-220AB JEDEC TO-263AB Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Ordering Information PART NUMBER PACKAGE BRAND HUF75321P3 TO-220AB 75321P HUF75321S3S TO-263AB 75321S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75321S3ST. D G S DRAIN SOURCE GATE DRAIN (FLANGE) DRAIN (FLANGE) GATE SOURCE Data Sheet December 2001 |
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