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ZXMN10A08GTA Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN10A08GTA Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 8 page ZXMN10A08G Issue 1 - June 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300 s - pulse width limited by maximum junction temperature. Parameter Symbol Limit Unit Drain-source voltage VDSS 100 V Gate-source voltage VGS ±20 V Continuous drain current @ VGS= 10V; Tamb = 25°C (b) ID 2.9 A @ VGS= 10V; Tamb = 70°C (b) 2.3 A @ VGS= 10V; Tamb = 25°C (a) 2.0 A Pulsed drain current(c) IDM 11 A Continuous source current (body diode)(b) IS 5A Pulsed source current (body diode)(c) ISM 11 A Power dissipation at Tamb =25°C (a) PD 2W Linear derating factor 16 mW/°C Power dissipation at Tamb =25°C (b) PD 3.9 W Linear derating factor 31 mW/°C Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient(a) R JA 62.5 °C/W Junction to ambient(b) R JA 32 °C/W |
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