MT58L128L18F datasheet(9/24 Pages) MICRON

Part #	MT58L128L18F

Description	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM

Download	24 Pages

Scroll/Zoom	100%

Manufacturer	MICRON [Micron Technology]

Direct Link	http://www.micron.com

Logo

9 / 24 page

9

2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT58L128L18F_2.p65 – Rev. 6/01

2Mb: 128K x 18, 64K x 32/36

FLOW-THROUGH SYNCBURST SRAM

ABSOLUTE MAXIMUM RATINGS*

Voltage on VDD Supply

Relative to VSS .................................... -0.5V to +4.6V

Voltage on VDDQ Supply

Relative to VSS .................................... -0.5V to +4.6V

VIN ............................................... -0.5V to VDDQ + 0.5V

Storage Temperature (plastic) ............ -55°C to +150°C

Junction Temperature** .................................... +150°C

Short Circuit Output Current ........................... 100mA

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

**Maximum junction temperature depends upon pack-

age type, cycle time, loading, ambient temperature and

airflow. See Micron Technical Note TN-05-14 for more

information.

3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(0°C

≤ T

A ≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

VIH

2.0

VDD + 0.3

V

1, 2

Input Low (Logic 0) Voltage

VIL

-0.3

0.8

V

1, 2

Input Leakage Current

0V

≤ VIN ≤ VDD

ILI

-1.0

1.0

µA

3

Output Leakage Current

Output(s) disabled,

ILO

-1.0

1.0

µA

0V

≤ VIN ≤ VDD

Output High Voltage

IOH = -4.0mA

VOH

2.4

–

V

1, 4

Output Low Voltage

IOL = 8.0mA

VOL

–

0.4

V

1, 4

Supply Voltage

VDD

3.135

3.6

V

1

Isolated Output Buffer Supply

VDDQ

3.135

VDD

V

1, 5

NOTE: 1. All voltages referenced to VSS (GND).

2. Overshoot:

VIH

≤ +4.6V for t ≤ tKC/2 for I ≤ 20mA

Undershoot: VIL

≥ -0.7V for t ≤ tKC/2 for I ≤ 20mA

Power-up:

VIH

≤ +3.6V and VDD ≤ 3.135V for t ≤ 200ms

3. MODE pin has an internal pull-up, and input leakage = ±10µA.

4. The load used for VOH, VOL testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher

than the stated DC values. AC I/O curves are available upon request.

5. VDDQ should never exceed VDD. VDD and VDDQ can be connected together for 3.3V I/O.

2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(0°C

≤ T

A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V; VDDQ = +2.5V +0.4V/-0.125V unless otherwise noted)

DESCRIPTION

CONDITIONS

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

Data bus (DQx)

VIHQ

1.7

VDDQ + 0.3

V

1, 2

Inputs

VIH

1.7

VDD + 0.3

V

1, 2

Input Low (Logic 0) Voltage

VIL

-0.3

0.7

V

1, 2

Input Leakage Current

0V

≤ VIN ≤ VDD

ILI

-1.0

1.0

µA

3

Output Leakage Current

Output(s) disabled,

ILO

-1.0

1.0

µA

0V

≤ VIN ≤ VDDQ (DQx)

Output High Voltage

IOH = -2.0mA

VOH

1.7

–

V

1, 4

IOH = -1.0mA

VOH

2.0

–

V

1, 4

Output Low Voltage

IOL = 2.0mA

VOL

–

0.7

V

1, 4

IOL = 1.0mA

VOL

–

0.4

V

1, 4

Supply Voltage

VDD

3.135

3.6

V

1

Isolated Output Buffer Supply

VDDQ

2.375

2.9

V

1

Similar Part No. - MT58L128L18F

Manufacturer	Part #	Datasheet	Description
Micron Technology	MT58L128L32F1	194Kb / 3P	4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM
Micron Technology	MT58L128L36F1	194Kb / 3P	4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM

More results

Similar Description - MT58L128L18F

Manufacturer	Part #	Datasheet	Description
Micron Technology	MT58L128V36F1	194Kb / 3P	4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM
Integrated Circuit Solu...	IC61SF12832	174Kb / 17P	128K x 32 Flow Through SyncBurst SRAM
Micron Technology	MT58L256V36F	475Kb / 27P	8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
Integrated Silicon Solu...	IS61NLP6432A	130Kb / 21P	64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM
AMIC Technology	A67L83161	271Kb / 19P	256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM
Alliance Semiconductor ...	AS7C3364FT32B	417Kb / 19P	3.3V 64K x 32/36 Flow Through Synchronous SRAM
Alliance Semiconductor ...	AS7C33128FT32B	416Kb / 19P	3.3V 128K x 32/36 Flow Through Synchronous SRAM
Integrated Circuit Solu...	IC61SP12832	254Kb / 16P	128K x 32 Pipelined SyncBurst SRAM
Integrated Silicon Solu...	IS61NF25618-8.5TQ	129Kb / 20P	128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH NO WAIT STATE BUS SRAM
AMIC Technology	A67P83181	246Kb / 18P	256K X 18, 128K X 36 LVTTL, Flow-through ZeBL SRAM

More results

MT58L128L18F Datasheet(PDF) 9 Page - Micron Technology

MT58L128L18F Datasheet(HTML) 9 Page - Micron Technology

Similar Part No. - MT58L128L18F

Similar Description - MT58L128L18F

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

Datasheet Download

Link URL