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MT58L64L32F Datasheet(PDF) 10 Page - Micron Technology

Part # MT58L64L32F
Description  2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

MT58L64L32F Datasheet(HTML) 10 Page - Micron Technology

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2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L128L18F_2.p65 – Rev. 6/01
©2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note: 1) (0°C
≤ T
A ≤ +70°C; VDD = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYM
TYP
-6.8
-7.5
-8.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL or ≥ VIH;
Current: Operating
Cycle time
tKC (MIN);
IDD
65
265
245
225
150
mA
2, 3, 4
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
ADSC#, ADSP#, ADV#, GW#, BWx#
IDD1
20
70
65
65
50
mA
2, 3, 4
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
tKC (MIN); Outputs open
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
0.5
10
10
10
10
mA
3, 4
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
6
25252525
mA
3, 4
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, ADV#, GW#, BWx#
ISB4
20
70
65
65
50
mA
3, 4
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
tKC (MIN)
MAX
NOTE: 1. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
5. VDDQ = +3.3V +0.3V/-0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O configuration.
6. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
7. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
8. Typical values are measured at 3.3V, 25°C, and 15ns cycle time.


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