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MF3513-J8CATXX Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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MF3513-J8CATXX Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 16 page MITSUBISHI MEMORY CARD STATIC RAM CARDS MITSUBISHI ELECTRIC 6/16 Apr. 1999 Rev. 1.2 13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. VOH High output voltage IOH= -1.0mA 2.4 V VOL Low output voltage IOL=2mA 0.4 V IIH High input current VI=Vcc V 10 µA IIL Low input current VI=0V CE1#, CE2#, WE#, OE#, REG# -10 -70 µA Other inputs -10 IOZH High output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, 10 µA in off state VO=Vcc IOZL Low output current CE1#=CE2#=VIH or OE#=VIH WE#=VIH, -10 µA in off state VO=0V Icc 1 • 1 Active supply CE1#=CE2#=VIL, other inputs 64KB~512KB 170 mA current 1 =VIH or VIL,Outputs=open 1MB~4MB 230 Icc 1 • 2 Active supply current 2 CE1#=CE2# ≤ 0.2V, other inputs ≤ 0.2V or 64KB~512KB 160 mA ≥ Vcc-0.2V, Outputs=open 1MB~4MB 220 Icc 2 • 1 Standby supply CE1#=CE2#=VIH 64KB~4MB 10 mA current 1 other inputs=VIH or VIL (17) Icc 2 • 2 Standby supply current 2 CE1#=CE2# ≥ Vcc-0.2V other inputs ≤ 0.2V or 64KB~512KB 0.45 (7.45) mA ≥ Vcc-0.2V 1MB~4MB 0.65 (7.65) VBDET1 Battery detect Vcc=5V, Ta=25°C 2.27 2.37 2.47 V reference voltage VBDET2 Battery detect Vcc=5V, Ta=25°C 2.55 2.65 2.75 V reference voltage Note 2 : Currents flowing into the card are taken as positive (unsigned). 3 : Typical values are measured at Vcc=5V, Ta=25°C. 4 : The figure in the parentheses indicates the standby current limits when the built-in auxiliary battery is not fully charged. 14. CAPACITANCE Limits Min. Typ. Max. CI Input capacitance VI=GND, vi=25mVrms f=1MHZ, Ta=25°C 30 pF CO Output Capacitance Vo =GND, vo=25mVrms f =1MHz, Ta=25°C 20 pF Note 5 : These parameters are not 100% tested. Symbol Unit Parameter Test conditions |
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