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MT58L128V18FT-8.5 Datasheet(PDF) 8 Page - Micron Technology |
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MT58L128V18FT-8.5 Datasheet(HTML) 8 Page - Micron Technology |
8 / 24 page 8 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. MT58L128L18F_2.p65 – Rev. 6/01 ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM TRUTH TABLE OPERATION ADDRESS CE# CE2# CE2 ZZ ADSP# ADSC# ADV# WRITE# OE# CLK DQ USED Deselected Cycle, Power-Down None H X X L X L X X X L-H High-Z Deselected Cycle, Power-Down None L X L L L X X X X L-H High-Z Deselected Cycle, Power-Down None L H X L L X X X X L-H High-Z Deselected Cycle, Power-Down None L X L L H L X X X L-H High-Z Deselected Cycle, Power-Down None L H X L H L X X X L-H High-Z SNOOZE MODE, Power-Down None X X X H X X X X X X High-Z READ Cycle, Begin Burst External L L H L L X X X L L-H Q READ Cycle, Begin Burst External L L H L L X X X H L-H High-Z WRITE Cycle, Begin Burst External L L H L H L X L X L-H D READ Cycle, Begin Burst External L L H L H L X H L L-H Q READ Cycle, Begin Burst External L L H L H L X H H L-H High-Z READ Cycle, Continue Burst Next X X X L H H L H L L-H Q READ Cycle, Continue Burst Next X X X L H H L H H L-H High-Z READ Cycle, Continue Burst Next H X X L X H L H L L-H Q READ Cycle, Continue Burst Next H X X L X H L H H L-H High-Z WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q READ Cycle, Suspend Burst Current X X X L H H H H H L-H High-Z READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q READ Cycle, Suspend Burst Current H X X L X H H H H L-H High-Z WRITE Cycle, Suspend Burst Current X X X L H H H L X L-H D WRITE Cycle, Suspend Burst Current H X X L X H H L X L-H D NOTE: 1. X means “Don’t Care.” # means active LOW. H means logic HIGH. L means logic LOW. 2. For WRITE#, L means any one or more byte write enable signals (BWa#, BWb#, BWc#, or BWd#) and BWE# are LOW or GW# is LOW. WRITE# = H for all BWx#, BWE#, GW# HIGH. 3. BWa# enables WRITEs to DQa pins, DQPa. BWb# enables WRITEs to DQb pins, DQPb. BWc# enables WRITEs to DQc pins, DQPc. BWd# enables WRITEs to DQd pins, DQPd. DQPa and DQPb are only available on the x18 and x36 versions. DQPc and DQPd are only available on the x36 version. 4. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK. 5. Wait states are inserted by suspending burst. 6. For a WRITE operation following a READ operation, OE# must be HIGH before the input data setup time and held HIGH throughout the input data hold time. 7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up. 8. ADSP# LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE# LOW or GW# LOW for the subsequent L-H edge of CLK. Refer to WRITE timing diagram for clarification. |
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Similar Description - MT58L128V18FT-8.5 |
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