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IRF7210PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7210PBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7210PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-14
–––
–––
V
VGS = 0V, ID = -5.0mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
–––
–––
V
VGS = 0V, ID = -250Β΅A
βˆ†V(BR)DSS/βˆ†TJ Breakdown Voltage Temp. Coefficient
––– 0.011 –––
V/Β°C Reference to 25Β°C, ID = -1mA
––– .005 .007
VGS = -4.5V, ID = -16A
Β‚
Β–Β–Β– .007 .010
VGS = -2.5V, ID = -12A
Β‚
VGS(th)
Gate Threshold Voltage
-0.6 –––
–––
V
VDS = VGS, ID = -500Β΅A
gfs
Forward Transconductance
16
–––
–––
S
VDS = -10V, ID = -16A
––– –––
-10
VDS = -12V, VGS = 0V
––– ––– -1.0
VDS = -9.6V, VGS = 0V
––– ––– -100
VDS = -12V, VGS = 0V, TJ = 70Β°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 12V
Qg
Total Gate Charge
––– 212 –––
ID = -10A
Qgs
Gate-to-Source Charge
–––
27
–––
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
52
–––
VGS = -5.0V
Β‚
td(on)
Turn-On Delay Time
–––
50
–––
ns
VDD = -10V
tr
Rise Time
–––
3.0
–––
ID = -10A
td(off)
Turn-Off Delay Time
–––
6.5
–––
RD = 1.0Ω
tf
Fall Time
–––
30
–––
RG = 6.2Ω
Β‚
Ciss
Input Capacitance
––– 17179 –––
VGS = 0V
Coss
Output Capacitance
––– 9455 –––
pF
VDS = -10V
Crss
Reverse Transfer Capacitance
––– 8986 –––
Ζ’ = 1.0kHz
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Β‚ Pulse width ≀ 300Β΅s; duty cycle ≀ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
––– -1.2
V
TJ = 25Β°C, IS = -2.5A, VGS = 0V
Β‚
trr
Reverse Recovery Time
–––
165 247
ns
TJ = 25Β°C, IF = -2.5A
Qrr
Reverse RecoveryCharge
–––
296 444
nC
di/dt = 85A/Β΅s
Β‚
Source-Drain Ratings and Characteristics
Β–Β–Β–
Β–Β–Β–
Β–Β–Β– Β–Β–Β–
-100
-2.5
A
Βƒ When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25Β°C (unless otherwise specified)
IGSS
Β΅A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
Β΅s
S
D
G




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