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IRF8010PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF8010PBF
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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Notes
 through † are on page 8
www.irf.com
1
07/06/04
IRF8010PbF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
100V
15m
80A†
PD - 95505
TO-220AB
Applications
l High frequency DC-DC converters
l UPS and Motor Control
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical RDS(on) = 12mΩ
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
N•m (lbf•in)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.57
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
-55 to + 175
300 (1.6mm from case )
1.1(10)
Max.
80
h
57
320
260
1.8
± 20
16




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