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IRG4BC15UD-SPBF Datasheet(PDF) 3 Page - International Rectifier

Part # IRG4BC15UD-SPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC15UD-SPBF Datasheet(HTML) 3 Page - International Rectifier

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IRG4BC15UD-S/LPbF
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
0.1
1
10
V
, Collector-to-Emitter Voltage (V)
CE
V
= 15V
20µs PULSE WIDTH
GE
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
5.0
10.0
15.0
20.0
V
, Gate-to-Emitter Voltage (V)
GE
V
= 50V
5µs PULSE WIDTH
CC
T = 150 C
J
°
T = 25 C
J
°
0.1
1
10
100
f , Frequency ( kHz )
0.00
2.00
4.00
4.00
6.00
8.00
8.00
10.00
12.00
12.00
0.00
4.00
8.00
12.00
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 11W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
60% of rated
voltage
Ideal diodes


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