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IRL520NS Datasheet(PDF) 2 Page - International Rectifier

Part No. IRL520NS
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRL520NS/L
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, ID = 1mA
…
–––
–––
0.18
VGS = 10V, ID = 6.0A
„
–––
–––
0.22
VGS = 5.0V, ID = 6.0A
„
–––
–––
0.26
VGS = 4.0V, ID = 5.0A
„
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
3.1
–––
–––
S
VDS = 25V, ID = 6.0A
…
–––
–––
25
VDS = 100V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -16V
Qg
Total Gate Charge
–––
–––
20
ID = 6.0A
Qgs
Gate-to-Source Charge
–––
–––
4.6
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
10
VGS = 5.0V, See Fig. 6 and 13
„…
td(on)
Turn-On Delay Time
–––
4.0
–––
VDD = 50V
tr
Rise Time
–––
35
–––
ID = 6.0A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 11Ω, VGS = 5.0V
tf
Fall Time
–––
22
–––
RD = 8.2Ω, See Fig. 10
„…
Between lead,
–––
–––
and center of die contact
Ciss
Input Capacitance
–––
440
–––
VGS = 0V
Coss
Output Capacitance
–––
97
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
50
–––
ƒ = 1.0MHz, See Fig. 5
…
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
LS
Internal Source Inductance
7.5
ns
IDSS
Drain-to-Source Leakage Current
A
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 6.0A, VGS = 0V
„
trr
Reverse Recovery Time
–––
110
160
ns
TJ = 25°C, IF = 6.0A
Qrr
Reverse Recovery Charge
–––
410
620
nC
di/dt = 100A/µs
„…
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
10
35
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
… Uses IRL520N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ƒ I
SD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
‚ V
DD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25Ω, IAS = 6.0A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )




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