MRFG35002N6T1 datasheet(9/12 Pages) FREESCALE

Part #	MRFG35002N6T1

Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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MRFG35002N6T1

9

RF Device Data

Freescale Semiconductor

Table 6. Class AB Common Source S-Parameters at VDS = 6 Vdc, IDQ = 65 mA (continued)

f

S11

S21

S12

S22

f

GHz

|S11|

∠φ

|S21|

∠φ

|S12|

∠φ

|S22|

∠φ

5.10

0.826

62.21

1.31

-70.79

0.0583

-95.6

0.528

77.0

5.15

0.824

59.75

1.31

-73.33

0.0592

-97.5

0.524

74.7

5.20

0.821

57.08

1.31

-75.85

0.0596

-99.5

0.519

72.3

5.25

0.819

54.50

1.31

-78.30

0.0605

-101.5

0.516

70.0

5.30

0.818

51.91

1.32

-80.93

0.0610

-103.7

0.512

67.4

5.35

0.815

49.24

1.32

-83.65

0.0617

-105.8

0.510

64.6

5.40

0.814

46.40

1.32

-86.36

0.0626

-108.2

0.506

61.9

5.45

0.812

43.69

1.32

-89.16

0.0629

-110.5

0.501

59.0

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MRFG35002N6T1 Datasheet(PDF) 9 Page - Freescale Semiconductor, Inc

MRFG35002N6T1 Datasheet(HTML) 9 Page - Freescale Semiconductor, Inc

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