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M58BW16FT5ZA3T Datasheet(PDF) 1 Page - STMicroelectronics |
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M58BW16FT5ZA3T Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 81 page Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. November 2006 Rev 2 1/81 1 M58BW16F M58BW32F 16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories Features ■ Supply voltage –VDD = 2.7V to 3.6V (45ns) or VDD = 2.5V to 3.3V (55ns) –VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers ■ High performance – Access times: 45 and 55ns – Synchronous Burst Reads – 75MHz Effective Zero Wait-State Burst Read – Asynchronous Page Reads ■ M58BW32F memory organization: – Eight 64 Kbit small parameter blocks – Four 128 Kbit large parameter blocks – Sixty-two 512 Kbit main blocks ■ M58BW16F memory organization: – Eight 64 Kbit parameter blocks – Thirty-one 512 Kbit main blocks ■ Hardware block protection –WP pin to protect any block combination from Program and Erase operations –PEN signal for Program/Erase Enable ■ Irreversible Modify protection (OTP like) on 128 Kbits: – Block 1 (bottom device) or Block 72 (top device) in the M58BW32F – Blocks 2 & 3 (bottom device) or Blocks 36 & 35 (top device) in the M58BW16F ■ Security – 64-bit Unique Device Identifier (UID) ■ Fast programming – Write to Buffer and Program capability ■ Optimized for FDI drivers – Common Flash Interface (CFI) – Fast Program/Erase Suspend feature in each block ■ Low power consumption – 100µA typical Standby current ■ Electronic signature – Manufacturer Code: 0020h – Top Device Codes: M58BW32FT: 8838h M58BW16FT: 883Ah – Bottom Device Codes: M58BW32FB: 8837h M58BW16FB: 8839h ■ Automotive Device Grade 3: – Temperature: –40 to 125°C – Automotive grade certified BGA LBGA80 (ZA) 10 x 8 ball array PQFP80 (T) www.st.com |
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