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M58BW16FT5ZA3T Datasheet(PDF) 1 Page - STMicroelectronics

Part # M58BW16FT5ZA3T
Description  16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BW16FT5ZA3T Datasheet(HTML) 1 Page - STMicroelectronics

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Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
November 2006
Rev 2
1/81
1
M58BW16F
M58BW32F
16 or 32 Mbit (x32, Boot Block, Burst)
3.3V supply Flash memories
Features
Supply voltage
–VDD = 2.7V to 3.6V (45ns) or
VDD = 2.5V to 3.3V (55ns)
–VDDQ = VDDQIN = 2.4V to 3.6V for I/O
Buffers
High performance
– Access times: 45 and 55ns
– Synchronous Burst Reads
– 75MHz Effective Zero Wait-State Burst
Read
– Asynchronous Page Reads
M58BW32F memory organization:
– Eight 64 Kbit small parameter blocks
– Four 128 Kbit large parameter blocks
– Sixty-two 512 Kbit main blocks
M58BW16F memory organization:
– Eight 64 Kbit parameter blocks
– Thirty-one 512 Kbit main blocks
Hardware block protection
–WP pin to protect any block combination
from Program and Erase operations
–PEN signal for Program/Erase Enable
Irreversible Modify protection (OTP like) on 128
Kbits:
– Block 1 (bottom device) or Block 72 (top
device) in the M58BW32F
– Blocks 2 & 3 (bottom device) or Blocks 36 &
35 (top device) in the M58BW16F
Security
– 64-bit Unique Device Identifier (UID)
Fast programming
– Write to Buffer and Program capability
Optimized for FDI drivers
– Common Flash Interface (CFI)
– Fast Program/Erase Suspend feature in
each block
Low power consumption
– 100µA typical Standby current
Electronic signature
– Manufacturer Code: 0020h
– Top Device Codes:
M58BW32FT: 8838h
M58BW16FT: 883Ah
– Bottom Device Codes:
M58BW32FB: 8837h
M58BW16FB: 8839h
Automotive Device Grade 3:
– Temperature: 40 to 125°C
– Automotive grade certified
BGA
LBGA80 (ZA)
10 x 8 ball array
PQFP80 (T)
www.st.com


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