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BU4508DX Datasheet(PDF) 4 Page - NXP Semiconductors |
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BU4508DX Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX Fig.7. Typical collector-emitter saturation voltage. Fig.8. Typical base-emitter saturation voltage. Fig.9. Typical collector storage and fall time. I C =5 A; Tj = 85˚C; f = 16kHz Fig.10. Normalised power dissipation. PD% = 100 ⋅P D/PD 25˚C Fig.11. Transient thermal impedance. 0.1 1 10 100 0.01 0.1 1 10 IC / A VCESAT \ V Ths = 25 C Ths = 85 C BU4508DF/X/Z 0 20 40 60 80 100 120 140 Ths / C PD% Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 01 23 4 0.6 0.7 0.8 0.9 1 1.1 1.2 IB / A VBESAT / V Ths = 25 C Ths = 85 C IC = 5 A BU4508DF/X/Z 1.0E-07 1.0E-05 1.0E-03 1.0E-01 1.0E+01 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 BU4508AF t / s Zth K/W D = tp tp T T P t D 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 IB / A ts/tf/ us ICsat = 5 A Ths = 85 C Freq = 16 kHz BU4508D ts/tf February 1999 4 Rev 1.000 |
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