MITSUBISHI MEMORY CARD

STATIC RAM CARDS

MITSUBISHI

ELECTRIC

6/16

Apr. 1999 Rev. 1.1

13. ELECTRICAL CHARACTERISTICS (Ta=0~55°C, Vcc=5V±5%, unless otherwise noted)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

High output voltage

2.4

V

Low output voltage

0.4

V

High input current

10

µA

Low input current

CE1#, CE2#, WE#, OE#, REG#

-10

-70

µA

Other inputs

-10

High output current

10

µA

in off state

Low output current

-10

µA

in off state

Icc 1 • 1

Active supply

64KB~512KB

170

mA

current 1

1MB~4MB

230

Icc 1 • 2

Active supply

current 2

CE1#=CE2#

≤ 0.2V, Other

inputs

≤ 0.2V or ≥ Vcc-0.2V,

64KB~512KB

160

mA

Outputs=open

1MB~4MB

220

Icc 2 • 1

Standby supply

64KB~4MB

10

mA

current 1

Icc 2 • 2

Standby supply

CE1#=CE2#

≥ Vcc-0.2V

64KB~512KB

0.45

mA

current 2

Other inputs

≤ 0.2V or

≥ Vcc-0.2V

1MB~4MB

0.65

VBDET1

Battery detect

Vcc=5V, Ta=25°C

2.27

2.37

2.47

V

reference voltage 1

VBDET2

Battery detect

Vcc=5V, Ta=25°C

2.55

2.65

2.75

V

reference voltage 2

Note 2 : Currents flowing into the card are taken as positive (unsigned).

3 : Typical values are measured at Vcc=5V, Ta=25°C.

14. CAPACITANCE

Limits

Min.

Typ.

Max.

Input capacitance

30

pF

Output Capacitance

Vo

=GND, vo=25mVrms

f

=1MHz, Ta=25°C

20

pF

Note 4 : These parameters are not 100% tested.

Symbol

Unit

Parameter

Test conditions