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MF32M1-LYCATXX Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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MF32M1-LYCATXX Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 14 page MITSUBISHI MEMORY CARD STATIC RAM CARDS MITSUBISHI ELECTRIC 2/14 Apr. 1999 Rev. 1.2 5. SUMMARY MF3XXX-LYCATXX series is the Static RAM cards which has 8/16 bit changeable data-bus width. The card has a replaceable lithium battery to maintain data in memory. When the card is not use or the supply voltage drops, the battery will automatically maintain data in memory. 6. FUNCTIONAL DESCRIPTION The function of the card is determined by the combination of the following five control signals, REG#, CE1#, CE2#, OE#, WE#; active low signals. (Please refer to section 10 FUNCTION TABLE on page 5) ((1))COMMON MEMORY FUNCTION When REG# signal is high level, the common memory area is selected. ((a))READ MODE To read, WE# is set high level and CE1# or CE2# is set low level and the memory address is applied at inputs A0-A21 (4MB). Setting OE# low level executes the reading with output at data-bus. It is available to make the following functions according to the combination of CE1# and CE2#. When CE1# is set low level and CE2# is set high level, the card operates as an 8 bit data-bus width card. The data can be dealt with lower data-bus (D0-D7). When both CE1# and CE2# are set low level, the card operates as a 16 bit data-bus width card. At this mode LSB of address-bus (A0) is ignored. In addition odd byte can be accessed through upper data-bus (D8-D15) when CE1# is set high level and CE2# is set low level. This mode is useful when handling only odd bytes in the 16 bit data-bus interface system (A0 is ignored ). When both CE1# and CE2# are set high level, the card becomes a standby mode where the card consumes low power and the data-bus is placed in high impedance state (above functions of CE1# and CE2# are the same as in the following modes ). When both OE# and WE# are set high level, the card becomes a output disable mode and the data-bus is placed in high impedance state. ((b))WRITE MODE To write, the memory address is first applied at inputs A0-A21 (4MB) and the data is applied at output pins. Setting CE1# or CE2# low level, WE# low level and OE# high level executes the writing. ((2))ATTRIBUTE MEMORY FUNCTION When REG# is set low level, the attribute memory area is selected. MF3XXX-LYCATXX series have no attribute memory, but outputs FFh on the lower data-bus(D0-D7 ) when the following conditions are applied (a)setting CE1# low, CE2# high, OE# low, WE# high and A0 low (b)setting CE1# low, CE2# low, OE# low and WE# high 7. WRITE PROTECT MODE When the write protect switch is switched on, this card goes into a write protect mode that can read but not write data. In this mode, WP pin becomes “H” level. At the shipment the write protect switch is switched off (Normal mode : The card can be written ; WP pin indicates “L” level). |
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