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MF34M1-LCDATXX Datasheet(PDF) 9 Page - Mitsubishi Electric Semiconductor |
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MF34M1-LCDATXX Datasheet(HTML) 9 Page - Mitsubishi Electric Semiconductor |
9 / 11 page MITSUBISHI MEMORY CARD STATIC RAM CARDS MITSUBISHI ELECTRIC 9/11 TIMING DIAGRAM (Attribute) Read Cycle WE#=“H” level REG#=“L” level Note 6 : Test Conditions Input pulse levels : V IL =0.4V, V IH =4.0V Input pulse rise, fall time : tr=tf=10ns Reference voltage Input : VIL =0.8V, V IH =3.5V Output : V OL =0.8V, V OH =3.0V (ten and tdis are measured when output voltage is± 500mV from steady state. ) Load : 100pF+1 TTL gate 5pF+1 TTL gate (at ten and tdis measuring) 7 : Writing is executed in overlap of CE# and WE# are “L” level. (only for Common Memory) 8 : Don’t apply inverted phase signal externally when Dm pin is in output mode. 9 : CE# is indicated as follows: Read A/Write A : CE#=CE1#=CE2# Read B/Writ e B : CE#=CE1#, CE2#=“H” level Read C/Write C : CE#=CE2#, CE1#=“H” level tCRR t a(A)R ta(CE)R ten(CE)R ten(OE)R tdis(OE)R tV(A)R ta(OE)R OUTPUT VALID Hi-Z tdis(CE)R An VIH Dm (DOUT) VOH VOL OE# VIH VIL CE# VIH VIL VIL |
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