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RTL035N03 Datasheet(PDF) 2 Page - Rohm |
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RTL035N03 Datasheet(HTML) 2 Page - Rohm |
2 / 3 page RTL035N03 Transistors 2/2 Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS Yfs Min. − Typ. Max. Unit Conditions V(BR) DSS IDSS VGS (th) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed − 10 µAVGS=12V, VDS=0V VDD 15V 30 −− VID= 1mA, VGS=0V −− 1 µAVDS= 30V, VGS=0V 0.5 − 1.5 V VDS= 10V, ID= 1mA − 40 56 ID= 3.5A, VGS= 4.5V − 42 59 m Ω m Ω m Ω ID=3.5A, VGS= 4V − 56 79 ID= 3.5A, VGS= 2.5V 3 −− SVDS= 10V, ID= 3.5A − 350 − pF VDS= 10V − 90 55 − pF VGS=0V − 9 − pF f=1MHz − 25 − ns − 32 − ns − 20 − ns − 4.6 − ns − 0.8 6.4 nC − 1.5 − nC VGS= 4.5V −− nC ID= 3.5A VDD 15 V ID= 1.75A VGS= 4.5V RL=8.6 Ω RG=10 Ω RL=4.3 Ω RG=10 Ω Body diode characteristics (Source-drain) (Ta=25 °C) VSD −− 1.2 V IS= 0.8A, VGS=0V Forward voltage Parameter Symbol Min. Typ. Max. Unit Conditions |
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