BU4530AL datasheet(4/6 Pages) PHILIPS

Part #	BU4530AL

Description	Silicon Diffused Power Transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4530AL

Fig.9. Typical collector-emitter saturation voltage.

V

CEsat = f (IC); parameter IC/IB

Fig.10. Typical collector storage and fall time.

I

C =9 A; Tj = 85˚C; f = 32kHz

Fig.11. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C

Fig.12. Transient thermal impedance.

Fig.13. I

Csat during normal running vs. frequency of

operation for optimum performance

0.1

1

10

100

0.01

0.1

1

10

IC / IB = 5

- - -Tj = 85 C

Tj = 25 C

VCEsat / V

IC / A

1E-07

1E-05

1E-03

1E-01

1E+01

0.001

0.01

0.1

1

10

0.2

0.1

0.05

0.02

0.5

BU4530AL

Zth / (K/W)

t / s

D =

tp

T

P

t

D

0

0.5

1

1.5

2

2.5

3

0

2

4

6

8

10

ts/tf / us

IB / A

0

20406080

100

0

2

4

6

8

10

Ic(sat) (A)

frequency (kHz)

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

April 1999

4

Rev 1.100

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